cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers ?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 j une 2009 cny171m, cny172m, cny173m, cny174m, cny17f1m, cny17f2m, cny17f3m, cny17f4m, moc8106m, moc8107m phototransistor optocouplers features ul recognized (file # e90700, vol. 2) vde recognized ?add option v (e.g., cny17f2vm) ?file #102497 current transfer ratio in select groups high bv ceo : 70v minimum (cny17xm, cny17fxm, moc810xm) closely matched current transfer ratio (ctr) minimizes unit-to-unit variation. very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (cny17fxm, moc810xm) applications power supply regulators digital logic inputs microprocessor inputs appliance sensor systems industrial controls description the cny17xm, cny17fxm and moc810xm devices consist of a gallium arsenide ired coupled with an npn phototransistor in a dual in-line package. schematics cny17f1m/2m/3m/4m moc8106m/7m cny171m/2m/3m/4m 1 2 6 5 collector collector 4 emitter nc nc nc anode cathode 3 1 2 6 5 4 emitter base anode cathode 3 pa ck ag e outlines
?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 2 cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symbol parameters value units tot al device t stg storage temperature -40 to +150 ? t opr operating temperature -40 to +100 ? t sol lead solder temperature 260 for 10 sec ? p d t otal device power dissipation @ 25? (led plus detector) derate linearly from 25? 250 mw 2.94 mw/? emitter i f continuous forward current 60 ma v r reverse voltage 6 v i f (pk) forward current ?peak (1? pulse, 300pps) 1.5 a p d led power dissipation 25? ambient derate linearly from 25? 120 mw 1.41 mw/? detector i c continuous collector current 50 ma v ceo collector-emitter voltage 70 v v eco emitter collector voltage 7 v p d detector power dissipation @ 25? derate linearly from 25? 150 mw 1.76 mw/?
?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 3 cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers electrical characteristics (t a = 25? unless otherwise speci?d.) (1) individual component characteristics isolation characteristics t ransfer characteristics (t a = 25? unless otherwise speci?d.) (3) *all typicals at t a = 25? symbol parameters test conditions device min. typ. max. units emitter v f input forward voltage i f = 60ma cny17xm, cny17fxm 1.0 1.35 1.65 v i f = 10ma moc810xm 1.0 1.15 1.50 c j capacitance v f = 0 v, f = 1.0mhz all 18 pf i r reverse leakage current v r = 6v all 0.001 10 ? detector bv ceo breakdown voltage collector to emitter i c = 1.0ma, i f = 0 all 70 100 v bv cbo collector to base i c = 10?, i f = 0 cny171m/2m/3m/4m 70 120 bv eco emitter to collector i e = 100?, i f = 0 all 7 10 i ceo leakage current collector to emitter v ce = 10 v, i f = 0 all 1 50 na i cbo collector to base v cb = 10 v, i f = 0 cny171m/2m/3m/4m 20 na c ce capacitance collector to emitter v ce = 0, f = 1mhz all 8 pf c cb collector to base v cb = 0, f = 1mhz cny171m/2m/3m/4m 20 pf c eb emitter to base v eb = 0, f = 1mhz cny171m/2m/3m/4m 10 pf symbol characteristic test conditions min. typ.* max. units v iso input-output isolation voltage f = 60 hz, t = 1 sec., i i-o 2? (4) 7500 vac(pk) r iso isolation resistance v i-o = 500 vdc (4) 10 11 ? c iso isolation capacitance v i-o = , f = 1mhz (4) 0.2 pf symbol dc characteristics test conditions min. typ.* max. units coupled (ctr) (2) output collector current moc8106m i f = 10ma, v ce = 10v 50 150 % moc8107m 100 300 cny17f1m i f = 10ma, v ce = 5v 40 80 cny17f2m 63 125 cny17f3m 100 200 cny17f4m 160 320 cny171m 40 80 cny172m 63 125 cny173m 100 200 cny174m 160 320 v ce(sat) collector-emitter saturation voltage cny17xm/fxm i c = 2.5ma, i f = 10ma 0.4 v moc8106m/7m i c = 500a, i f = 5.0ma
?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 4 cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers electrical characteristics (continued) (t a = 25? unless otherwise speci?d.) (1) t ransfer characteristics (continued) (3) *all typicals at t a = 25? notes: 1. always design to the specified minimum/maximum electrical limits (where applicable). 2. current transfer ratio (ctr) = i c /i f x 100%. 3. for test circuit setup and waveforms, refer to figures 10 and 11. 4. for this test, pins 1 and 2 are common, and pins 4 are 5 are common. symbol ac characteristics (4) t est conditions min. typ.* max. units non-saturated switching time t on tu r n-on time all devices i c = 2.0ma, v cc = 10v, r l = 100 ? 210 s t off tu r n-off time all devices i c = 2.0ma, v cc = 10v, r l = 100 ? 310 s t d delay time cny17xm/xfm i f = 10ma, v cc = 5v, r l = 75 ? 5.6 ? t r rise time all devices i c = 2.0ma, v cc = 10v, r l = 100 ? 1 s cny17xm/fxm i f = 10ma, v cc = 5v, r l = 75 ? 4.0 t s storage time cny17xm/fxm i f = 10ma, v cc = 5v, r l = 75 ? 4.1 ? t f f all time all devices i c = 2.0ma, v cc = 10v, r l = 100 ? 2 s cny17xm/fxm i f = 10ma, v cc = 5v, r l = 75 ? 3.5 saturated switching times t on tu r n-on time cny171m/f1m i f = 20ma, v cc = 5v, r l = 1k ? 5.5 ? cny172m/3m/4m cny17f2m/f3m/f4m i f = 10ma, v cc = 5v, r l = 1k ? 8.0 t r rise time cny171m/f1m i f = 20ma, v cc = 5v, r l = 1k ? 4.0 ? cny172m/3m/4m cny17f2m/f3m/f4m i f = 10ma, v cc = 5v, r l = 1k ? 6.0 t d delay time cny171m/f1m i f = 20ma, v cc = 5v, r l = 1k ? 5.5 ? cny172m/3m/4m cny17f2m/f3m/f4m i f = 10ma, v cc = 5v, r l = 1k ? 8.0 t off tu r n-off time cny171m/f1m i f = 20ma, v ce = 0.4v 34 ? cny172m/3m/4m cny17f2m/f3m/f4m i f = 10ma, v ce = 0.4v 39 t f f all time cny171m/f1m i f = 20ma, v cc = 5v, r l = 1k ? 20.0 ? cny172m/3m/4m cny17f2m/f3m/f4m i f = 10ma, v cc = 5v, r l = 1k ? 24.0 t s storage time cny171m/f1m i f = 20ma, v cc = 5v, r l = 1k ? 34.0 ? cny172m/3m/4m cny17f2m/f3m/f4m i f = 10ma, v cc = 5v, r l = 1k ? 39.0
?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 5 cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers typical performance characteristics fig. 1 normalized ctr vs. forward current i f ? forward current (ma) 02468101214161820 normalized ctr 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce = 5.0v t a = 25?c normalized to i f = 10ma fig. 2 normalized ctr vs. ambient temperature t a ? ambient temperature (?c) -60 -40 -20 0 20 40 60 80 100 normalized ctr 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i f = 5ma i f = 10ma i f = 20ma normalized to: i f = 10ma t a = 25?c fig. 3 ctr vs. rbe (unsaturated) r be ? base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 5.0v i f = 20ma i f = 10ma i f = 5ma fig. 4 ctr vs. rbe (saturated) switching s peed ( s) fig. 5 switching speed vs. load resistor r ? load resistor (k ?) 0.1 1 10 100 0.1 1 10 100 1000 t off t on t f i f = 10ma v cc = 10v t a = 25?c t r r be ? base resistance (k ?) r be ? base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i f = 20ma i f = 10ma i f = 5ma v ce = 0.3v normalized t on ? (t on(r be ) / t on(open) ) fig. 6 normalized t on vs. r be 10 100 1000 10000 100000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v cc = 10v i c = 2ma r l = 100 ?
?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 6 cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers typical performance characteristics (continued) figure 10. switching time test circuit figure 11. switching time waveforms 10 100 1000 10000 100000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v cc = 10v i c = 2ma r l = 100 ? normalized t off ? (t off(r be ) / t off(open) ) r be ? base resistance (k ?) fig. 7 normalized t off vs. r be i f ? led forward current (ma) v f ? forward voltage (v) fig. 8 led forward voltage vs. forward current 110 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = 25 c t a = -55 c t a = 100 c 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 i f = 5ma i f = 20ma i f = 10ma fig. 9 collector-emitter saturation voltage vs collector current i c - collector current (ma) v ce (sat) - collector-emitter saturation voltage (v) i f = 2.5ma t a = 25 ?c r l i f i c v cc output (v ce ) input input pulse output pulse t on t off t r t d t f t s 10% 90%
?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 7 cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers package dimensions 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 7.62 (typ.) 15?(typ.) 0.20?.30 0.20?.30 10.16?0.80 through hole 0.4" lead spacing surface mount rcommended pad layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13?.89 note: all dimensions in mm. 6.10?.60 8.43?.90 pin 1 64 13 0.25?.36 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 0.38 (min.) 3.28?.53 5.08 (max.) 0.20?.30 0.16?.88 (8.13)
?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 8 cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers ordering information marking information option order entry identi?r (example) description no option cny171m standard through hole device s cny171sm surface mount lead bend sr2 cny171sr2m surface mount; tape and reel t cny171tm 0.4" lead spacing v cny171vm iec60747-5-2 tv cny171tvm iec60747-5-2, 0.4" lead spacing sv cny171svm iec60747-5-2, surface mount sr2v cny171sr2vm iec60747-5-2, surface mount, tape and reel cny17-1 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ? see order entry table) 4 one digit year code, e.g., ?7? 5t wo digit work week ranging from ?01? to ?53? 6 assembly package code v x yy q
?006 fairchild semiconductor corporation www.fairchildsemi.com cny17xm, cny17fxm, moc810xm rev. 1.0.9 9 cny17xm, cny17fxm, moc810xm ?phototransistor optocouplers carrier tape specification reflow profile 4.0 0.1 ? 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 ? 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
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